FGY75T120SWD
FGY75T120SWD is N-Channel Power IGBT manufactured by onsemi.
IGBT
- Power, Co-PAK
N-Channel, Field Stop VII (FS7), Non SCR, Power TO247-3L, 1200 V, 1.7 V, 75 A
Description Using the novel field stop 7th generation IGBT technology and the
Gen7 Diode in TO247 3- lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high- efficiency operations in various applications like Solar, UPS and ESS.
Features
- Maximum Junction Temperature
- TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operation
- High Current Capability
- Smooth and Optimized Switching
- Low Switching Loss
- Ro HS pliant
Applications
- Boost and Inverter in Solar System
- UPS
- Energy Storage System
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector- to- Emitter Voltage Gate- to- Emitter Voltage Transient Gate- to- Emitter Voltage
VCES
VGES
±20
±30
Collector Current
Power Dissipation
Pulsed Collector...
