FGY75T120SWD - N-Channel Power IGBT

Datasheet Summary

Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3 lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high

efficiency operations in various applications like Solar, UPS and ESS.

Features

Maximum Junction Temperature.
TJ = 175°C.
Positive Temperature Coefficient for Easy Parallel Operation.
High Current Capability.
Smooth and Optimized Switching.
Low Switching Loss.
RoHS Compliant.

ON Semiconductor

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Datasheet Details

Part number	FGY75T120SWD
Manufacturer	ON Semiconductor
File Size	349.15 KB
Description	N-Channel Power IGBT
Datasheet	FGY75T120SWD Datasheet
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Full PDF Text Transcription

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IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), Non SCR, Power TO247-3L, 1200 V, 1.7 V, 75 A FGY75T120SWD Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS and ESS.

Published: Feb 5, 2023 |