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FGY75T120SWD - N-Channel Power IGBT

General Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3 lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high

efficiency operations in various applications like Solar, UPS and ESS.

Key Features

  • Maximum Junction Temperature.
  • TJ = 175°C.
  • Positive Temperature Coefficient for Easy Parallel Operation.
  • High Current Capability.
  • Smooth and Optimized Switching.
  • Low Switching Loss.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), Non SCR, Power TO247-3L, 1200 V, 1.7 V, 75 A FGY75T120SWD Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS and ESS.