FODM181B Overview
Single Channel, DC Sensing Input, Phototransistor Optocoupler In Full-Pitch Mini-Flat 4-Pin Package Product Preview FODM181 Series The FODM181 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a pact, half−pitch, mini−flat, 4−pin package. The lead pitch is 2.54 mm.
FODM181B Key Features
- Current Transfer Ratio Ranges from 20 to 600%
- at IF = 5 mA, VCE = 5 V, TA = 25°C
- FODM181A
- 80 to 160%
- FODM181B
- 130 to 260%
- FODM181C
- 200 to 400%
- FODM181D
- 300 to 600%
FODM181B Applications
- Primarily Suited for DC−DC Converters
- For Ground Loop Isolation, Signal to Noise Isolation