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FODM181D - Phototransistor Optocoupler

Download the FODM181D datasheet PDF. This datasheet also covers the FODM181A variant, as both devices belong to the same phototransistor optocoupler family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Current Transfer Ratio Ranges from 20 to 600%.
  • at IF = 5 mA, VCE = 5 V, TA = 25°C.
  • FODM181A.
  • 80 to 160%.
  • FODM181B.
  • 130 to 260%.
  • FODM181C.
  • 200 to 400%.
  • FODM181D.
  • 300 to 600%.
  • Safety and Regulatory Approvals:.
  • UL1577, 3750 VACRMS for 1 min.
  • DIN EN/IEC60747.
  • 5.
  • 5, 565 V Peak Working Insulation Voltage (Pending).
  • Applicable to Infrared Ray Reflow, 260°C Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FODM181A-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FODM181D
Manufacturer onsemi
File Size 378.79 KB
Description Phototransistor Optocoupler
Datasheet download datasheet FODM181D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com Single Channel, DC Sensing Input, Phototransistor Optocoupler In Full-Pitch Mini-Flat 4-Pin Package Product Preview FODM181 Series The FODM181 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 2.54 mm.