FQA11N90-F109 Datasheet - ON Semiconductor

N-Channel MOSFET

FQA11N90-F109 Features

* 11.4 A, 900 V, RDS(on) = 960 mW (Max.) @ VGS = 10 V, ID = 5.7 A

* Low Gate Charge (Typ.72 nC)

* Low Crss (Typ. 30 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free Halide, Free and RoHS Compliant MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise

FQA11N90-F109 General Description

This N *Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s.

FQA11N90-F109 Datasheet (296.58 KB)