FQA11N90-F109 mosfet equivalent, n-channel mosfet.
* 11.4 A, 900 V, RDS(on) = 960 mW (Max.) @ VGS = 10 V, ID = 5.7 A
* Low Gate Charge (Typ.72 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested
* This.
This N−Channel Enhancement Mode Power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching perfo.
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