FQA11N90-F109
Description
This N- Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on- state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 11.4 A, 900 V, RDS(on) = 960 m W (Max.) @ VGS = 10 V, ID = 5.7 A
- Low Gate Charge (Typ.72 n C)
- Low Crss (Typ. 30 p F)
- 100% Avalanche Tested
- This Device is Pb- Free Halide, Free and Ro HS pliant
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
Symbol
Parameter
Value
Unit
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain to Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C) Drain Current
- Pulsed (Note 1) Gate to Source Voltage Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive...
