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FQA24N60 - N-Channel MOSFET

Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Features

  • 23.5 A, 600 V, RDS(on) = 240 mW (Max. ) @ VGS = 10 V, ID = 11.8 A.
  • Low Gate Charge (Typ. 110 nC).
  • Low Crss (Typ. 56 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free.

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Datasheet preview – FQA24N60

Datasheet Details

Part number FQA24N60
Manufacturer onsemi
File Size 276.60 KB
Description N-Channel MOSFET
Datasheet download datasheet FQA24N60 Datasheet
Additional preview pages of the FQA24N60 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, QFET 600 V, 23.5 A, 240 mW FQA24N60 Description This N−Channel Enhancement Mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 23.5 A, 600 V, RDS(on) = 240 mW (Max.) @ VGS = 10 V, ID = 11.8 A • Low Gate Charge (Typ. 110 nC) • Low Crss (Typ. 56 pF) • 100% Avalanche Tested • This Device is Pb−Free ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.
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