FQA24N60
Overview
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
- 23.5 A, 600 V, RDS(on) = 240 mΩ (Max.) @ VGS = 10 V, ID = 11.8 A
- Low Gate Charge (Typ. 110 nC)
- Low Crss (Typ. 56 pF)
- 100% Avalanche Tested
- S TO-3PN
