FQA24N60 - N-Channel MOSFET

onsemi

General Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

23.5 A, 600 V, RDS(on) = 240 mW (Max. ) @ VGS = 10 V, ID = 11.8 A.
Low Gate Charge (Typ. 110 nC).
Low Crss (Typ. 56 pF).
100% Avalanche Tested.
This Device is Pb.
Free.

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FQA24N60 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FQA24N60
Manufacturer	onsemi
File Size	276.60 KB
Description	N-Channel MOSFET
Datasheet	FQA24N60 Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, QFET 600 V, 23.5 A, 240 mW FQA24N60 Description This N−Channel Enhancement Mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 23.5 A, 600 V, RDS(on) = 240 mW (Max.) @ VGS = 10 V, ID = 11.8 A • Low Gate Charge (Typ. 110 nC) • Low Crss (Typ. 56 pF) • 100% Avalanche Tested • This Device is Pb−Free ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.