FQA24N60 Description
This N−Channel Enhancement Mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp...
FQA24N60 Key Features
- 23.5 A, 600 V, RDS(on) = 240 mW (Max.) @ VGS = 10 V, ID = 11.8 A
- Low Gate Charge (Typ. 110 nC)
- Low Crss (Typ. 56 pF)
- 100% Avalanche Tested
- This Device is Pb-Free