| Part Number | FQA24N60 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel Enhancement Mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
reduce on−state r.
* 23.5 A, 600 V, RDS(on) = 240 mW (Max.) @ VGS = 10 V, ID = 11.8 A * Low Gate Charge (Typ. 110 nC) * Low Crss (Typ. 56 pF) * 100% Avalanche Tested * This Device is Pb *Free ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Symbol Parameter Value Unit VDSS ID IDM VGSS EAS IAR EAR dv/d. |
FQA24N60 Datasheet and Specifications PDF
The FQA24N60 is a N-Channel MOSFET.
| Part Number | FQA24N60 Datasheet |
|---|---|
| Description | 600V N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .
* 23.5 A, 600 V, RDS(on) = 240 mΩ (Max.) @ VGS = 10 V, ID = 11.8 A * Low Gate Charge (Typ. 110 nC) * Low Crss (Typ. 56 pF) * 100% Avalanche Tested D G G D S TO-3PN Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Vol. |