FQB27N25TM-F085
Overview
- Typ RDS(on) = 108mΩ at VGS = 10V, ID = 25.5A N
- Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A IG
- UIS Capability S
- RoHS Compliant E
- Qualified to AEC Q101 *
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |