FQD5N60C Datasheet | onsemi

FQD5N60C / FQU5N60C - N-Channel QFET® MOSFET FQD5N60C / FQU5N60C N-Channel QFET® MOSFET 600 V, 2.8 A, 2.5 Ω Features - 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 1.4 A - Low Gate Charge ( Typ. 15 n C) - Low Crss (Typ. 6.5 p F) - 100% Avalanche Tested - Ro HS pliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D-PAK I-PAK...