FQN1N60C
FQN1N60C is N-Channel MOSFET manufactured by onsemi.
scription This N- Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on- state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 0.3 A, 600 V, RDS(on) = 11.5 W (Max.) @ VGS = 10 V,
ID = 0.15 A
- Low Gate Charge (Typ. 4.8 n C)
- Low Crss (Typ. 3.5 p F)
- 100% Avalanche Tested
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25°C) Continuous (TC = 100°C)
±30
A 0.3 0.18
IDM Drain Current
- Pulsed
(Note 1)
EAS Single Pulsed Avalanche Energy (Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
0.3 dv/dt Peak Diode Recovery dv/dt
(Note 3)
A m J A m J V/ns
PD Power Dissipation (TA = 25°C) (TL = 25°C) Derate above...
