FQN1N60C
Description
This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 0.3 A, 600 V, RDS(on) = 11.5 W (Max.) @ VGS = 10 V
- Low Gate Charge (Typ. 4.8 nC)
- Low Crss (Typ. 3.5 pF)
- 100% Avalanche Tested
