FQP3N50C mosfet equivalent, 500v n-channel mosfet.
* 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V
* Low gate charge ( typical 10 nC )
* Low Crss ( typical 8.5 pF)
* Fast switching
* 100 % avalanche tested .
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior.
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