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FQP3N50C Datasheet 500V N-Channel MOSFET

Manufacturer: onsemi

Overview: FQP3N50C/FQPF3N50C 500V N-Channel MOSFET QFET® FQP3N50C/FQPF3N50C 500V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Key Features

  • 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V.
  • Low gate charge ( typical 10 nC ).
  • Low Crss ( typical 8.5 pF).
  • Fast switching.
  • 100 % avalanche tested.
  • Improved dv/dt capability.