FQP3N50C Datasheet | onsemi

FQP3N50C/FQPF3N50C 500V N-Channel MOSFET QFET® FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features - 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V - Low gate charge ( typical 10 nC ) - Low Crss ( typical 8.5 pF) - Fast switching - 100 % avalanche tested - Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode...