FQP3N50C
Overview
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V
- Low gate charge ( typical 10 nC )
- Low Crss ( typical 8.5 pF)
- Fast switching
- 100 % avalanche tested
- Improved dv/dt capability
