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FQP9N30
N-Channel QFET) MOSFET
300 V, 9.0 A, 450 mW
Description This N−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 9.0 A, 300 V, RDS(on) = 450 mW (Max.) @ VGS = 10 V,
ID = 4.5 A
• Low Gate Charge (Typ. 17 nC) • Low Crss (Typ. 16 pF) • 100% Avalanche Tested
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.
FQP9N30 Datasheet
