FQP9N30 - N-Channel MOSFET

onsemi

General Description

This N

using ON Semiconductor’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanch

Key Features

9.0 A, 300 V, RDS(on) = 450 mW (Max. ) @ VGS = 10 V, ID = 4.5 A.
Low Gate Charge (Typ. 17 nC).
Low Crss (Typ. 16 pF).
100% Avalanche Tested.

📥 Download Datasheet

FQP9N30 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FQP9N30
Manufacturer	onsemi
File Size	247.80 KB
Description	N-Channel MOSFET
Datasheet	FQP9N30 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FQP9N30	300V N-Channel MOSFET	Fairchild Semiconductor
FQP9N08	80V N-Channel MOSFET	Fairchild Semiconductor
FQP9N08L	80V LOGIC N-Channel MOSFET	Fairchild Semiconductor
FQP9N15	150V N-Channel MOSFET	Fairchild Semiconductor
FQP9N25	250V N-Channel MOSFET	Fairchild Semiconductor

Other Datasheets by onsemi

Part Number	Description
FQP9N90C	N-Channel MOSFET
FQP13N50C	N-Channel MOSFET
FQP17N40	N-Channel MOSFET
FQP17P10	P-Channel MOSFET
FQP27P06	P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FQP9N30 N-Channel QFET) MOSFET 300 V, 9.0 A, 450 mW Description This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 9.0 A, 300 V, RDS(on) = 450 mW (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 17 nC) • Low Crss (Typ. 16 pF) • 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.