FQP9N30 Datasheet - ON Semiconductor

N-Channel MOSFET

FQP9N30 Features

* 9.0 A, 300 V, RDS(on) = 450 mW (Max.) @ VGS = 10 V, ID = 4.5 A

* Low Gate Charge (Typ. 17 nC)

* Low Crss (Typ. 16 pF)

* 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Parameter Symbol Value Unit Drain

* Source Voltage Dr

FQP9N30 General Description

This N *Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanch.

FQP9N30 Datasheet (247.80 KB)