FQPF47P06
Description
This P-Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.
Key Features
- 30 A, -60 V, RDS(on) = 26 mW (Max.) @ VGS = -10 V, ID = -15 A
- Low Gate Charge (Typ. 84 nC)
- Low Crss (Typ. 320 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
