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FQPF9N90CT - N-Channel MOSFET

This page provides the datasheet information for the FQPF9N90CT, a member of the FQP9N90C N-Channel MOSFET family.

Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Features

  • 8 A 900 V, RDS(on) = 1.4 W (Max. ) @ VGS = 10 V, ID = 4 A.
  • Low Gate Charge (Typ. 45 nC).
  • Low Crss (Typ. 14 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free Halide, Free and RoHS Compliant. DATA SHEET www. onsemi. com GDS TO.
  • 220 CASE 221A GDS TO.
  • 220 Fullpack, 3.
  • Lead / TO.
  • 220F.
  • 3SG CASE 221AT D G S.

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Datasheet preview – FQPF9N90CT

Datasheet Details

Part number FQPF9N90CT
Manufacturer ON Semiconductor
File Size 390.80 KB
Description N-Channel MOSFET
Datasheet download datasheet FQPF9N90CT Datasheet
Additional preview pages of the FQPF9N90CT datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, QFET) 900 V, 8.0 A, 1.4 W FQP9N90C, FQPF9N90CT Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 8 A 900 V, RDS(on) = 1.4 W (Max.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 14 pF) • 100% Avalanche Tested • This Device is Pb−Free Halide, Free and RoHS Compliant. DATA SHEET www.onsemi.
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