Datasheet Details
| Part number | FQPF9N90C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.74 KB |
| Description | N-Channel MOSFET |
| Datasheet | FQPF9N90C-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor ·.
| Part number | FQPF9N90C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.74 KB |
| Description | N-Channel MOSFET |
| Datasheet | FQPF9N90C-INCHANGE.pdf |
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·RDS(on) = 1.4 Ω @VGS = 10 V, ID = 4 A ·Fast Switching Speed ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A ID(puls) Pulse Drain Current Ptot Total Dissipation@TC=25℃ 36 A W 30 Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.17 ℃/W FQPF9N90C isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=250uA VGS(th) Gate Threshold Voltage VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FQPF9N90C | 900V N-Channel MOSFET | Fairchild Semiconductor |
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FQPF9N90CT | N-Channel MOSFET | ON Semiconductor |
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