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FQPF9N90CT Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, QFET) 900 V, 8.0 A, 1.4 W FQP9N90C, FQPF9N90CT.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 8 A 900 V, RDS(on) = 1.4 W (Max. ) @ VGS = 10 V, ID = 4 A.
  • Low Gate Charge (Typ. 45 nC).
  • Low Crss (Typ. 14 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free Halide, Free and RoHS Compliant. DATA SHEET www. onsemi. com GDS TO.
  • 220 CASE 221A GDS TO.
  • 220 Fullpack, 3.
  • Lead / TO.
  • 220F.
  • 3SG CASE 221AT D G S.

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