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FQPF9N90CT - N-Channel MOSFET

Download the FQPF9N90CT datasheet PDF. This datasheet also covers the FQP9N90C variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

  • 8 A 900 V, RDS(on) = 1.4 W (Max. ) @ VGS = 10 V, ID = 4 A.
  • Low Gate Charge (Typ. 45 nC).
  • Low Crss (Typ. 14 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free Halide, Free and RoHS Compliant. DATA SHEET www. onsemi. com GDS TO.
  • 220 CASE 221A GDS TO.
  • 220 Fullpack, 3.
  • Lead / TO.
  • 220F.
  • 3SG CASE 221AT D G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP9N90C-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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FQPF9N90C 900V N-Channel MOSFET Fairchild Semiconductor
FQPF9N90C N-Channel MOSFET INCHANGE
FQPF9N08 80V N-Channel MOSFET Fairchild Semiconductor
FQPF9N08L 80V LOGIC N-Channel MOSFET Fairchild Semiconductor
FQPF9N15 150V N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FQPF13N50C N-Channel MOSFET
FQPF27P06 P-Channel MOSFET
FQPF3N50C 500V N-Channel MOSFET
FQPF47P06 P-Channel MOSFET
FQPF47P06YDTU P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, QFET) 900 V, 8.0 A, 1.4 W FQP9N90C, FQPF9N90CT Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 8 A 900 V, RDS(on) = 1.4 W (Max.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 14 pF) • 100% Avalanche Tested • This Device is Pb−Free Halide, Free and RoHS Compliant. DATA SHEET www.onsemi.