FQU1N60C Key Features
- 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A
- Low Gate Charge (Typ. 4.8 nC)
- Low Crss (Typ. 3.5 pF)
- 100% Avalanche Tested
- RoHS pliant
- Part: FQU1N60C
- Manufacturer: onsemi (official site)
- Size: 523.97 KB
Other FQU1N60C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild |
FQU1N60C | 600V N-Channel MOSFET |
HAOHAI |
FQU1N60C | N-Channel MOSFET |
|
Fairchild |
FQU1N60 | 600V N-Channel MOSFET |
| OuCan OuCan |
FQU1N60 | 1.3A N-Channel MOSFET |
FQU1N60C Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic...