Datasheet4U Logo Datasheet4U.com

FQU1N60C - 600V N-Channel MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

Key Features

  • 1 A, 600 V, RDS(on) = 11.5 Ω (Max. ) @ VGS = 10 V, ID = 0.5 A.
  • Low Gate Charge (Typ. 4.8 nC).
  • Low Crss (Typ. 3.5 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant D G S D-PAK G D S I-PAK G! D !.
  • ◀▲.
  • ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulse.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQU1N60C N-Channel MOSFET HAOHAI
FQU1N60C N-Channel MOSFET ON Semiconductor
FQU1N60 1.3A N-Channel MOSFET OuCan
FQU10N20 N-Channel MOSFET INCHANGE
FQU11P06 P-Channel MOSFET VBsemi

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQU1N60 600V N-Channel MOSFET
FQU1N50 500V N-Channel MOSFET
FQU1N50 500V N-Channel MOSFET
FQU1N50B 500V N-Channel MOSFET
FQU1N80 800V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQD1N60C / FQU1N60C N-Channel QFET® MOSFET April 2013 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 3.