FQU1N60C Datasheet | onsemi

FQD1N60C / FQU1N60C - N-Channel QFET® MOSFET .onsemi. FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω Features - 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A - Low Gate Charge (Typ. 4.8 nC) - Low Crss (Typ. 3.5 pF) - 100% Avalanche Tested - RoHS pliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor...