Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max. ) @ VGS = 10 V, ID = 0.8 A.
- Low Gate Charge (Typ. 6.0 nC).
- Low Crss (Typ. 4.3 pF).
- Fast Switching.
- 100% Avalanche Tested.
- Improved dv/dt Capability
D
GDS
I-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Ga.
FQU2N50B Datasheet
