FQU2N50B
Overview
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
- 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V, ID = 0.8 A
- Low Gate Charge (Typ. 6.0 nC)
- Low Crss (Typ. 4.3 pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- GDS I-PAK G
