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FW217A - N-Channel Power MOSFET

Features

  • On-state resistance RDS(on)1=30mΩ (typ. ).
  • 4.5V drive.
  • Halogen free compliance.
  • Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP IDP PD PT Tch Tstg Conditions Duty cycle≤1% Duty cycle≤1% When mounted on ce.

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Datasheet Details

Part number FW217A
Manufacturer onsemi
File Size 276.52 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FW217A Datasheet

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Full PDF Text Transcription

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Ordering number : EN8994B FW217A N-Channel Power MOSFET 35V, 6A, 39mΩ, Dual SOIC8 http://onsemi.com Features • On-state resistance RDS(on)1=30mΩ (typ.) • 4.5V drive • Halogen free compliance • Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP IDP PD PT Tch Tstg Conditions Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Ratings 35 ±20 6 6.5 24 1.8 2.
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