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FW276 - N-Channel Power MOSFET

Key Features

  • On-resistance RDS(on)=9.3Ω(typ. ).
  • Input capacitance Ciss=55pF(typ. ).
  • 10V drive.
  • Nch+Nch dual MOSFET.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Tc = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current (PW≤10μs) ID IDL.
  • 1 IDP Duty cycle≤1% Power Dissipation (1 unit) PD Total Power Dissipation (2 units) PT Junction Temperature Tj Storage Temperature.

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Datasheet Details

Part number FW276
Manufacturer onsemi
File Size 425.17 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FW276 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA2289 FW276 N-Channel Power MOSFET 450V, 0.7A, 12.1Ω, Dual SOIC8 http://onsemi.com Features • On-resistance RDS(on)=9.3Ω(typ.) • Input capacitance Ciss=55pF(typ.) • 10V drive • Nch+Nch dual MOSFET • Halogen free compliance Specifications Absolute Maximum Ratings at Tc = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current (PW≤10μs) ID IDL*1 IDP Duty cycle≤1% Power Dissipation (1 unit) PD Total Power Dissipation (2 units) PT Junction Temperature Tj Storage Temperature Tstg Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds Note: *1 Package limited TL Conditions Value 450 ±30 0.7 0.35 2.8 1.6 2.