The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number : ENA2289
FW276
N-Channel Power MOSFET
450V, 0.7A, 12.1Ω, Dual SOIC8
http://onsemi.com
Features
• On-resistance RDS(on)=9.3Ω(typ.) • Input capacitance Ciss=55pF(typ.) • 10V drive • Nch+Nch dual MOSFET • Halogen free compliance
Specifications
Absolute Maximum Ratings at Tc = 25°C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC) Drain Current (PW≤10μs)
ID
IDL*1
IDP
Duty cycle≤1%
Power Dissipation (1 unit)
PD
Total Power Dissipation (2 units)
PT
Junction Temperature
Tj
Storage Temperature
Tstg
Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds Note: *1 Package limited
TL
Conditions
Value 450 ±30 0.7 0.35 2.8 1.6 2.