FW217A Datasheet PDF - ON Semiconductor N-Channel Power MOSFET Specs

FW217A - N-Channel Power MOSFET

Datasheet Summary

Features

On-state resistance RDS(on)1=30mΩ (typ. ).
4.5V drive.
Halogen free compliance.
Protection Diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP IDP PD PT Tch Tstg Conditions Duty cycle≤1% Duty cycle≤1% When mounted on ce.

Datasheet Details

Part number	FW217A
Manufacturer	ON Semiconductor
File Size	276.52 KB
Description	N-Channel Power MOSFET
Datasheet	FW217A Datasheet
Additional preview pages of the FW217A datasheet.

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Full PDF Text Transcription

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Ordering number : EN8994B FW217A N-Channel Power MOSFET 35V, 6A, 39mΩ, Dual SOIC8 http://onsemi.com Features • On-state resistance RDS(on)1=30mΩ (typ.) • 4.5V drive • Halogen free compliance • Protection Diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP IDP PD PT Tch Tstg Conditions Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Ratings 35 ±20 6 6.5 24 1.8 2.

Published: Feb 7, 2016 |