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HGT1S12N60A4DS Datasheet, ON Semiconductor

HGT1S12N60A4DS igbt equivalent, n-channel igbt.

HGT1S12N60A4DS Avg. rating / M : 1.0 rating-16

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HGT1S12N60A4DS Datasheet

Features and benefits

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower o.

Application

operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequen.

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