HGT1S7N60A4DS, HGTG7N60A4D Datasheet - ON Semiconductor

HGT1S7N60A4DS N-Channel IGBT

Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25 34 A IC110 14 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C (.

HGT1S7N60A4DS Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The much lower on

* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331.

HGTG7N60A4D-ONSemiconductor.pdf

HGT1S7N60A4DS Datasheet Preview — This datasheet PDF includes multiple part numbers: HGT1S7N60A4DS, HGTG7N60A4D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HGT1S7N60A4DS, HGTG7N60A4D

Manufacturer:

ON Semiconductor ↗

File Size:

537.51 KB

Description:

N-channel igbt.

Note:

This datasheet PDF includes multiple part numbers: HGT1S7N60A4DS, HGTG7N60A4D.
Please refer to the document for exact specifications by model.

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