HGT1S7N60A4DS - N-Channel IGBT

Product Overview

ON Semiconductor

Datasheet Details

Part number	HGT1S7N60A4DS
Manufacturer	ON Semiconductor
File Size	537.51 KB
Description	N-Channel IGBT
Datasheet	HGT1S7N60A4DS Datasheet
Note	This datasheet PDF includes multiple part numbers: HGT1S7N60A4DS, HGTG7N60A4D. Please refer to the document for exact specifications by model.
Additional preview pages of the HGT1S7N60A4DS datasheet.

Product details

Description

Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25 34 A IC110 14 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C (Figure 1) Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C ICM VGES VGEM SSOA PD 56 ±20 ±30 35 A at 600 V 125 1.0 A V V W W/°C Operating and Storage Junction Temperature R

Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on.
state conduction loss of a bipolar transistor. The much lower on.
state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331. The diode used in anti.
parallel is the development type TA49370. This IGBT is ideal for many high voltage switching.

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Published: Oct 3, 2022 |