Datasheet4U Logo Datasheet4U.com

HGT1S7N60A4DS Datasheet Smps Series N-channel IGBT

Manufacturer: Fairchild (now onsemi)

Overview: Data Sheet HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching.

Key Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Intersil Corporation Logo HGT1S7N60A4DS 600V SMPS Series N-Channel IGBT Intersil Corporation
ON Semiconductor Logo HGT1S7N60A4DS N-Channel IGBT ON Semiconductor
Intersil Corporation Logo HGT1S7N60A4S 600V SMPS Series N-Channel IGBT Intersil Corporation
ON Semiconductor Logo HGT1S7N60A4S9A N-Channel IGBT ON Semiconductor

More Datasheets from Fairchild (now onsemi)

Part Number Description
HGT1S7N60A4S9A 600V SMPS Series N-Channel IGBT
HGT1S7N60B3DS 14A 600V UFS Series N-Channel IGBT
HGT1S7N60C3D UFS Series N-Channel IGBT
HGT1S7N60C3DS UFS Series N-Channel IGBT
HGT1S10N120BNS 35A/ 1200V/ NPT Series N-Channel IGBT
HGT1S11N120CNS N-Channel IGBT
HGT1S12N60A4DS N-Channel IGBT
HGT1S12N60A4S9A N-Channel IGBT
HGT1S12N60B3DS N-Channel IGBT
HGT1S12N60C3 N-Channel IGBT

HGT1S7N60A4DS Distributor