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HGT1S7N60C3DS Datasheet Ufs Series N-channel IGBT

Manufacturer: HARRIS

Overview: HGTP7N60C3D, HGT1S7N60C3D, SEMICONDUCTOR HGT1S7N60C3DS January 1997 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best

Key Features

  • 14A, 600V at TC = 25oC.
  • 600V Switching SOA Capability.
  • Typical Fall Time.
  • . . . . 140ns at TJ = 150oC.
  • Short Circuit Rating.
  • Low Conduction Loss.
  • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB.

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