HGT1S7N60C3D Datasheet Text
HGTP7N60C3D, HGT1S7N60C3D,
SEMICONDUCTOR
HGT1S7N60C3DS
January 1997
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Features
- 14A, 600V at TC = 25oC
- 600V Switching SOA Capability
- Typical Fall Time
- - . . . . 140ns at TJ = 150oC
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
COLLECTOR (FLANGE)
EMITTER COLLECTOR
GATE
Description
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices bining the best Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.
The IGBT is ideal for many high voltage switching applications...
