HGT1S7N60C3D
Description
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Key Features
- 14A, 600V at TC = 25oC
- 600V Switching SOA Capability
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode Packaging
