HGTG10N120BND Datasheet - ON Semiconductor

N-Channel IGBT

HGTG10N120BND Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switch

HGTG10N120BND General Description

Symbol HGTG10N120BND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 35 A IC110 17 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 15.

HGTG10N120BND Datasheet (436.10 KB)

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HGTG10N120BND

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N-channel igbt.
NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35 A, 1200 V HGTG10N120BND The HGTG10N120BND is a Non Punch Through (NPT) IGBT de.

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HGTG10N120BND Features

HGTG10N120BND General Description

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