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IGBT - SMPS 600 V, 40 A
HGTG20N60A4
Description The HGTG20N60A4 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
Features
• 40 A, 600 V @ TC = 110°C • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A • Typical Fall Time: 55 ns at TJ = 125°C • Low Conduction Loss • This is a Pb−Free Device
Applications
• UPS, Welder
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G E E C G
TO−247−3LD CASE 340CK MARKING DIAGRAM
$Y&Z&3&K 20N60A4
© Semiconductor Components Industries, LLC, 2005
February, 2020 − Rev.
HGTG20N60A4 Datasheet
