HGTG20N60A4
HGTG20N60A4 is IGBT manufactured by onsemi.
IGBT
- SMPS 600 V, 40 A
Description The HGTG20N60A4 bines the best Features of high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
Features
- 40 A, 600 V @ TC = 110°C
- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A
- Typical Fall Time: 55 ns at TJ = 125°C
- Low Conduction Loss
- This is a Pb- Free Device
Applications
- UPS, Welder
.onsemi. C
G E E C G
TO- 247- 3LD CASE 340CK MARKING DIAGRAM
$Y&Z&3&K 20N60A4
© Semiconductor ponents Industries, LLC, 2005
February, 2020
- Rev. 3
$Y &Z &3 &K 20N60A4
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Publication Order Number:
HGTG20N60A4/D...
