HGTG20N60B3
HGTG20N60B3 is N-Channel IGBT manufactured by onsemi.
features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. The much lower on- state voltage drop varies only moderately between 25°C and 150°C.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly developmental type TA49050.
Features
- 40 A, 600 V at TC = 25°C
- 600 V Switching SOA Capability
- Typical Fall Time 140 ns at 150°C
- Short Circuit Rated
- Low Conduction Loss
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
- This is a Pb- Free Device
.onsemi. C
G E EC G COLLECTOR (FLANGE)
TO- 247- 3LD SHORT LEAD CASE 340CK JEDEC STYLE
MARKING DIAGRAM
$Y&Z&3&K HG20N60B3
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
HG20N60B3 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor ponents Industries, LLC, 2004
April, 2020
- Rev. 2
Publication Order Number: HGTG20N60B3/D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Parameter
Symbol HGTG20N60B3
Unit
Collector to Emitter Voltage Collector to Gate Voltage, RGE = 1...
