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HGTG20N60B3 Datasheet N-channel IGBT

Manufacturer: onsemi

Overview: UFS Series N-Channel IGBTs 40 A, 600 V HGTG20N60B3 The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the.

Key Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on.
  • state conduction loss of a bipolar transistor. The much lower on.
  • state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching.

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Fairchild Semiconductor Logo HGTG20N60B3D N-Channel IGBT Fairchild Semiconductor
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