HGTG20N60B3D Datasheet | Fairchild Semiconductor

features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly developmental type TA49016. Features - 40A, 600V at TC = 25o C - Typical Fall Time- - - - 140ns at 150o C - Short Circuit Rated - Low Conduction Loss - Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 Ordering Information PART NUMBER HGTG20N60B3D PACKAGE TO-247 BRAND G20N60B3D COLLECTOR (BOTTOM SIDE METAL) NOTE: When ordering, use the entire part number. Symbol FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified HGTG20N60B3D Collector to Emitter Voltage - - - - - - - - - . BVCES Collector to Gate Voltage, RGE = 1MΩ - - - - - - - . BVCGR Collector Current Continuous - - - - - - - - - IC25 At TC = 110o C -...