HGTG20N60C3 Datasheet | Fairchild Semiconductor

features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49178. Features - 45A, 600V, TC = 25o C - 600V Switching SOA Capability - Typical Fall Time- - - . 108ns at TJ = 150o C - Short Circuit Rating - Low Conduction Loss - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Packaging JEDEC STYLE TO-247 Ordering Information PART NUMBER HGTG20N60C3 HGTP20N60C3 HGT1S20N60C3S PACKAGE TO-247 TO-220AB TO-263AB BRAND G20N60C3 G20N60C3 G20N60C3 COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N60C3S9A. Symbol JEDEC TO-220AB (ALTERNATE VERSION) E G G E COLLECTOR (FLANGE) C JEDEC TO-263AB COLLECTOR (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified ALL TYPES Collector to Emitter Voltage - - - ....