HGTG20N60C3D Datasheet | Intersil

features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49179. Features - 45A, 600V, TC = 25o C - 600V Switching SOA Capability - Typical Fall Time- - - . 108ns at TJ = 150o C - Short Circuit Rating - Low Conduction Loss - Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 Ordering Information PART NUMBER HGTG20N60C3D PACKAGE TO-247 BRAND G20N60C3D NOTE: When ordering, use the entire part number. Symbol INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified HGTG20N60C3D Collector to Emitter Voltage - - - - - - - - - .BVCES Collector Current Continuous At TC = 25o C - - - - - ....