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HGTG20N60B3D Datasheet N-channel IGBT

Manufacturer: Intersil (now Renesas)

Overview: HGTG20N60B3D Data Sheet January 2000 File Number 3739.6 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device bining the.

Key Features

  • of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching.

HGTG20N60B3D from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Fairchild Semiconductor Logo HGTG20N60B3D N-Channel IGBT Fairchild Semiconductor
ON Semiconductor Logo HGTG20N60B3D N-Channel IGBT ON Semiconductor
Fairchild Semiconductor Logo HGTG20N60B3 N-Channel IGBT Fairchild Semiconductor
ON Semiconductor Logo HGTG20N60B3 N-Channel IGBT ON Semiconductor

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HGTG20N60B3D Distributor