HGTG20N60B3D Datasheet
HGTG20N60B3D Datasheet (Intersil)
Intersil
HGTG20N60B3D Data Sheet January 2000 File Number 3739.6 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining.
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The.
HGTG20N60B3D Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features.
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The.
HGTG20N60B3D Datasheet (onsemi)
onsemi
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40 A, 600 V HGTG20N60B3D The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar t.
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on
*state conduction loss of a bipolar transistor. The much lower on
*state voltage drop varies only moderately between 25°C and 150°C. The diode used in anti
*parallel with the IGBT is the RHRP3060.
The.