HGTP7N60A4 Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application
HGT1S7N60A4S9A-ONSemiconductor.pdf
Datasheet Details
HGTP7N60A4, HGT1S7N60A4S9A
246.74 KB
N-channel igbt.
This datasheet PDF includes multiple part numbers: HGTP7N60A4, HGT1S7N60A4S9A.
Please refer to the document for exact specifications by model.
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HGTP7N60A4 Distributor
