HGTP7N60A4D Datasheet | onsemi

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices bining the best Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. The much lower on- state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331. The diode used in anti- parallel is the development type TA49370. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49333. Features - >100 k Hz Operation at 390 V, 7 A - 200 k Hz Operation at 390 V, 5 A - 600 V Switching SOA Capability - Typical Fall Time: 75 ns at TJ = 125°C - Low Conduction Loss - Temperature pensating SABER™ Model .onsemi. - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant .onsemi. TO- 247- 3LD CASE 340CK TO- 220- 3LD CASE 340AT D2PAK- 3 CASE 418AJ MARKING DIAGRAMS $Y&Z&3&K G7N60A4D $Y&Z&3&K G7N60A4D $Y&Z&3&K G7N60A4D © Semiconductor ponents Industries, LLC, 2005 May, 2020 - Rev. 2 &Y &Z &3 &K G7N60A4D = ON Semiconductor Logo = Assembly Plant Code = 3- Digit Date Code = 2- Digit Lot Traceability Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order...