| Part Number | HGTP7N60A4D Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | Data Sheet HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high . of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used . |
HGTP7N60A4D Datasheet and Specifications PDF
The HGTP7N60A4D is a N-Channel IGBT.
Key Specifications
| Package | TO-220-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | HGTP7N60A4D Datasheet |
|---|---|
| Description | N-Channel IGBT |
| Manufacturer | Intersil |
| Overview | TM HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet March 2000 File Number 4827.1 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS. of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used . |
| Part Number | HGTP7N60A4D Datasheet |
|---|---|
| Description | N-Channel IGBT |
| Manufacturer | onsemi |
| Overview |
Symbol
All Types
Units
Collector to Emitter Voltage Collector Current Continuous
At TC = 25°C At TC = 110°C
BVCES
600
V
IC25
34
A
IC110
14
A
Collector Current Pulsed (Note 1) Gate to Emi.
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on *state conduction loss of a bipolar transistor. The much lower on *state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331. The diode used . |