HGTP7N60A4 Datasheet | onsemi

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices bining the best Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49331. Features - >100k Hz Operation at 390V, 7A - 200k Hz Operation at 390V, 5A - 600V Switching SOA Capability - Typical Fall Time - - - . . . . 75ns at TJ = 125o C - Low Conduction Loss Ordering Information PART NUMBER PACKAGE BRAND HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4 TO-263AB TO-247 TO-220AB G7N60A4 G7N60A4 G7N60A4 NOTE: When ordering, use the entire part number. Symbol Packaging JEDEC STYLE TO-247 COLLECTOR (BOTTOM SIDE METAL) JEDEC TO-220AB E C G COLLECTOR (FLANGE) JEDEC...