HUF75345G3 Datasheet | onsemi

Description These N- Channel power MOSFETs are manufactured using the innovative Ultra FET process. This advanced process technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery- operated products. Features - 75 A, 55 V - Simulation Models - Temperature pensated PSPICEt and SABER® Models - Thermal Impedance SPICE and SABER Models - Peak Current vs Pulse Width Curve - UIS Rating Curve - These Devices are Pb- Free .onsemi. VDSS 55 V RDS(ON) MAX 7 m W ID MAX 75 A S DRAIN (TAB) TO- 247- 3 CASE 340CK G D S GDS DRAIN (FLANGE) TO- 220- 3 CASE 340AT DRAIN (FLANGE) D2PAK- 3 CASE 418AJ MARKING DIAGRAM $Y&Z&3&K 75345X © Semiconductor ponents Industries, LLC, 2009 March, 2020 - Rev. 3 $Y &Z &3 &K 75345X = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code X = G/P/S ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: HUF75345S3S/D HUF75345G3, HUF75345P3, HUF75345S3S PACKAGE MARKING AND ORDERING INFORMATION Part...