HUF75345S3S Overview
These N−Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
HUF75345S3S Key Features
- 75 A, 55 V
- Simulation Models
- Temperature pensated PSPICEt and SABER® Models
- Thermal Impedance SPICE and SABER Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- These Devices are Pb-Free
- Rev. 3
- Continuous (Figure 2)
- Pulsed
