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HUF75345G3 Datasheet N-channel Power MOSFET

Manufacturer: onsemi

Overview: MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3,.

General Description

These N−Channel power MOSFETs are manufactured using the innovative UltraFET process.

This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.

Key Features

  • 75 A, 55 V.
  • Simulation Models.
  • Temperature Compensated PSPICEt and SABER® Models.
  • Thermal Impedance SPICE and SABER Models.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • These Devices are Pb.
  • Free www. onsemi. com VDSS 55 V RDS(ON) MAX 7 mW D ID MAX 75 A G S DRAIN (TAB) TO.
  • 247.
  • 3 CASE 340CK G D S GDS DRAIN (FLANGE) TO.
  • 220.
  • 3 CASE 340AT DRAIN (FLANGE) G S D2PAK.
  • 3 CASE 418AJ.

Similar Datasheet

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Fairchild Semiconductor Logo HUF75345G3 N-Channel MOSFET Fairchild Semiconductor
Intersil Corporation Logo HUF75345G3 N-Channel MOSFET Intersil Corporation

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HUF75345G3 Distributor