Datasheet4U Logo Datasheet4U.com

HUF75345G3 - N-Channel Power MOSFET

General Description

These N

the innovative UltraFET process.

resistance per silicon area, resulting in outstanding performance.

Key Features

  • 75 A, 55 V.
  • Simulation Models.
  • Temperature Compensated PSPICEt and SABER® Models.
  • Thermal Impedance SPICE and SABER Models.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • These Devices are Pb.
  • Free www. onsemi. com VDSS 55 V RDS(ON) MAX 7 mW D ID MAX 75 A G S DRAIN (TAB) TO.
  • 247.
  • 3 CASE 340CK G D S GDS DRAIN (FLANGE) TO.
  • 220.
  • 3 CASE 340AT DRAIN (FLANGE) G S D2PAK.
  • 3 CASE 418AJ.

📥 Download Datasheet

Datasheet Details

Part number HUF75345G3
Manufacturer onsemi
File Size 598.04 KB
Description N-Channel Power MOSFET
Datasheet download datasheet HUF75345G3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HUF75345G3 N-Channel MOSFET Fairchild Semiconductor
HUF75345G3 N-Channel MOSFET Intersil Corporation
HUF75345P3 N-Channel MOSFET Fairchild Semiconductor
HUF75345P3 N-Channel MOSFET Intersil Corporation
HUF75345S3S N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
HUF75345P3 N-Channel Power MOSFET
HUF75345S3S N-Channel Power MOSFET
HUF75344G3 N-Channel UltraFET Power MOSFET
HUF75344P3 N-Channel UltraFET Power MOSFET
HUF75329D3S N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low−voltage bus switches, and power management in portable and battery−operated products.