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ISL9V3040D3ST-F085C Datasheet

N-Channel IGBT

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ISL9V3040x3ST-F085C
EcoSPARK) Ignition IGBT
300 mJ, 400 V, NChannel Ignition IGBT
Features
SCIS Energy = 300 mJ at TJ = 25°C
Logic Level Gate Drive
AECQ101 Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
Applications
Automotive Ignition Coil Driver Circuits
High Current Ignition System
Coil on Plug Application
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
BVCER Collector to Emitter Breakdown
Voltage (IC = 1 mA)
400 V
BVECS Emitter to Collector Voltage Reverse
Battery Condition (IC = 10 mA)
24
V
ESCIS25
ESCIS150
IC25
IC110
VGEM
ISCIS = 14.2 A, L = 3.0 mHy,
RGE = 1 KW, TC = 25°C (Note 1)
ISCIS = 10.6 A, L = 3.0 mHy,
RGE = 1 KW, TC = 150°C (Note 2)
Collector Current Continuous
at VGE = 4.0 V, TC = 25°C
Collector Current Continuous
at VGE = 4.0 V, TC = 110°C
Gate to Emitter Voltage Continuous
300 mJ
170 mJ
21 A
17 A
±10 V
PD
TJ, TSTG
Power Dissipation Total, TC = 25°C
Power Dissipation Derating, TC > 25°C
Operating Junction and Storage
Temperature
150
1
55 to +175
W
W/°C
°C
TL Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
300 °C
TPKG Reflow Soldering according to
JESD020C
260 °C
ESD
HBMElectrostatic Discharge Voltage
at 100 pF, 1500 W
4
kV
CDMElectrostatic Discharge Voltage
at 1 W
2
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on
the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.2 A,
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on
the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.6 A,
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
www.onsemi.com
COLLECTOR
GATE
R1
R2
EMITTER
DPAK3
CASE 369AS
D2PAK3
CASE 418AJ
MARKING DIAGRAM
AYWW
XXX
XXXXXG
A
Y
WW
XXXX
G
= Assembly Location
= Year
= Work Week
= Device Code
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
© Semiconductor Components Industries, LLC, 2016
August, 2019 Rev. 1
1
Publication Order Number:
ISL9V3040F085C//D


  ON Semiconductor Electronic Components Datasheet  

ISL9V3040D3ST-F085C Datasheet

N-Channel IGBT

No Preview Available !

ISL9V3040x3STF085C
THERMAL RESISTANCE RATINGS
Characteristic
JunctiontoCase – Steady State (Drain)
Symbol
RqJC
Max
1
Units
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
OFF CHARACTERISTICS
BVCER
Collector to Emitter Breakdown
Voltage
BVCES
Collector to Emitter Breakdown
Voltage
BVECS
BVGES
ICER
Emitter to Collector Breakdown
Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
IECS
Emitter to Collector Leakage Current
R1 Series Gate Resistance
R2 Gate to Emitter Resistance
ON CHARACTERISTICS
ICE = 2 mA, VGE = 0 V,
RGE = 1 kW,
TJ = 40 to 150°C
ICE = 10 mA, VGE = 0 V,
RGE = 0,
TJ = 40 to 150°C
ICE = 75 mA, VGE = 0 V,
TJ = 25°C
IGES = ±2 mA
VCE = 175 V
RGE = 1 kW
TJ = 25°C
TJ = 150°C
VEC = 24 V
TJ = 25°C
TJ = 150°C
370 400 430 V
390 420 450 V
30
V
±12 ±14 V
− − 25 mA
− − 1 mA
− − 1 mA
− − 40
70 W
10K 26K W
VCE(SAT)
Collector to Emitter Saturation
Voltage
ICE = 6 A, VGE = 4 V, TJ = 25°C
1.25 1.65
V
VCE(SAT) Collector to Emitter Saturation
Voltage
ICE = 10 A, VGE = 4.5 V, TJ = 150°C
1.58 1.80
V
VCE(SAT) Collector to Emitter Saturation
Voltage
ICE = 15 A, VGE = 4.5 V, TJ = 150°C
1.90 2.20
V
DYNAMIC CHARACTERISTICS
QG(ON)
VGE(TH)
Gate Charge
Gate to Emitter Threshold Voltage
VGEP
Gate to Emitter Plateau Voltage
SWITCHING CHARACTERISTICS
ICE = 10 A, VCE = 12 V, VGE = 5 V
ICE = 1 mA
VCE = VGE
TJ = 25°C
TJ = 150°C
VCE = 12 V, ICE = 10 A
17
1.3
0.75
3.0
nC
2.2 V
1.8
V
td(ON)R
trR
Current TurnOn Delay
TimeResistive
Current Rise TimeResistive
VCE = 14 V, RL = 1 W,
VGE = 5 V, RG = 470 W,
TJ = 25°C
0.7 4 ms
2.1 7
td(OFF)L
tfL
Current TurnOff Delay
TimeInductive
Current Fall TimeInductive
VCE = 300 V, L = 1 mH,
VGE = 5 V, RG = 470 W,
ICE = 6.5 A, TJ = 25°C
4.8 15
2.8 15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Package
Shipping
ISL9V3040D3STF085C
DPAK
(PbFree)
2500 Units/Tape & Reel
ISL9V3040S3STF085C
D2PAK
(PbFree)
800 Units/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2


Part Number ISL9V3040D3ST-F085C
Description N-Channel IGBT
Maker ON Semiconductor
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