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ISL9V3040D3ST-F085C Datasheet

N-Channel IGBT

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ISL9V3040x3ST-F085C

EcoSPARK) Ignition IGBT

300 mJ, 400 V, N−Channel Ignition IGBT

Features

• SCIS Energy = 300 mJ at TJ = 25°C

• Logic Level Gate Drive

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Automotive Ignition Coil Driver Circuits

• High Current Ignition System

• Coil on Plug Application

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

BVCER Collector to Emitter Breakdown

Voltage (IC = 1 mA)

400 V

BVECS Emitter to Collector Voltage − Reverse

Battery Condition (IC = 10 mA)

ESCIS25

ESCIS150

IC25

IC110

VGEM

ISCIS = 14.2 A, L = 3.0 mHy,

RGE = 1 KW, TC = 25°C (Note 1)

ISCIS = 10.6 A, L = 3.0 mHy,

RGE = 1 KW, TC = 150°C (Note 2)

Collector Current Continuous

at VGE = 4.0 V, TC = 25°C

Collector Current Continuous

at VGE = 4.0 V, TC = 110°C

Gate to Emitter Voltage Continuous

300 mJ

170 mJ

21 A

17 A

±10 V

TJ, TSTG

Power Dissipation Total, TC = 25°C

Power Dissipation Derating, TC > 25°C

Operating Junction and Storage

Temperature

150

−55 to +175

W/°C

°C

TL Lead Temperature for Soldering

Purposes (1/8” from case for 10 s)

300 °C

TPKG Reflow Soldering according to

JESD020C

260 °C

ESD

HBM−Electrostatic Discharge Voltage

at 100 pF, 1500 W

CDM−Electrostatic Discharge Voltage

at 1 W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on

the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.2 A,

VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.

2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on

the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.6 A,

VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.

www.onsemi.com

COLLECTOR

GATE

EMITTER

DPAK3

CASE 369AS

D2PAK−3

CASE 418AJ

MARKING DIAGRAM

AYWW

XXX

XXXXXG

XXXX

= Assembly Location

= Year

= Work Week

= Device Code

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information on page 2

of this data sheet.

August, 2019 − Rev. 1

Publication Order Number:

ISL9V3040−F085C//D


	ON Semiconductor Electronic Components Datasheet

ISL9V3040D3ST-F085C Datasheet

N-Channel IGBT

No Preview Available !

ISL9V3040x3ST−F085C

THERMAL RESISTANCE RATINGS

Characteristic

Junction−to−Case – Steady State (Drain)

Symbol

RqJC

Max

Units

°C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

OFF CHARACTERISTICS

BVCER

Collector to Emitter Breakdown

Voltage

BVCES

Collector to Emitter Breakdown

Voltage

BVECS

BVGES

ICER

Emitter to Collector Breakdown

Voltage

Gate to Emitter Breakdown Voltage

Collector to Emitter Leakage Current

IECS

Emitter to Collector Leakage Current

R1 Series Gate Resistance

R2 Gate to Emitter Resistance

ON CHARACTERISTICS

ICE = 2 mA, VGE = 0 V,

RGE = 1 kW,

TJ = −40 to 150°C

ICE = 10 mA, VGE = 0 V,

RGE = 0,

TJ = −40 to 150°C

ICE = −75 mA, VGE = 0 V,

TJ = 25°C

IGES = ±2 mA

VCE = 175 V

RGE = 1 kW

TJ = 25°C

TJ = 150°C

VEC = 24 V

TJ = 25°C

TJ = 150°C

370 400 430 V

390 420 450 V

30 −

−V

±12 ±14 − V

− − 25 mA

− − 1 mA

− − 40

− 70 − W

10K − 26K W

VCE(SAT)

Collector to Emitter Saturation

Voltage

ICE = 6 A, VGE = 4 V, TJ = 25°C

−

1.25 1.65

VCE(SAT) Collector to Emitter Saturation

Voltage

ICE = 10 A, VGE = 4.5 V, TJ = 150°C

−

1.58 1.80

VCE(SAT) Collector to Emitter Saturation

Voltage

ICE = 15 A, VGE = 4.5 V, TJ = 150°C

−

1.90 2.20

DYNAMIC CHARACTERISTICS

QG(ON)

VGE(TH)

Gate Charge

Gate to Emitter Threshold Voltage

VGEP

Gate to Emitter Plateau Voltage

SWITCHING CHARACTERISTICS

ICE = 10 A, VCE = 12 V, VGE = 5 V

ICE = 1 mA

VCE = VGE

TJ = 25°C

TJ = 150°C

VCE = 12 V, ICE = 10 A

− 17

1.3 −

0.75 −

− 3.0

− nC

2.2 V

1.8

−V

td(ON)R

trR

Current Turn−On Delay

Time−Resistive

Current Rise Time−Resistive

VCE = 14 V, RL = 1 W,

VGE = 5 V, RG = 470 W,

TJ = 25°C

− 0.7 4 ms

− 2.1 7

td(OFF)L

tfL

Current Turn−Off Delay

Time−Inductive

Current Fall Time−Inductive

VCE = 300 V, L = 1 mH,

VGE = 5 V, RG = 470 W,

ICE = 6.5 A, TJ = 25°C

− 4.8 15

− 2.8 15

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

PACKAGE MARKING AND ORDERING INFORMATION

Device

Package

Shipping†

ISL9V3040D3ST−F085C

DPAK

(Pb−Free)

2500 Units/Tape & Reel

ISL9V3040S3ST−F085C

D2PAK

(Pb−Free)

800 Units/Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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