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MBR2030CTLG - Dual Schottky Power Rectifier

Download the MBR2030CTLG datasheet PDF. This datasheet also covers the MBR2030CTL variant, as both devices belong to the same dual schottky power rectifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • Highly Stable Oxide Passivated Junction.
  • Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C).
  • High Junction Temperature.
  • High dv/dt Capability.
  • Excellent Ability to Withstand Reverse Avalanche Energy Transients.
  • Low Power Loss/High Efficiency.
  • High Surge Capacity.
  • 175°C Operating Junction Temperature.
  • 20 A Total (10 A Per Diode Leg).
  • This Device is Pb.
  • Free and is RoHS Compliant.
  • Applicat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR2030CTL-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR2030CTLG
Manufacturer onsemi
File Size 237.55 KB
Description Dual Schottky Power Rectifier
Datasheet download datasheet MBR2030CTLG Datasheet

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Full PDF Text Transcription

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MBR2030CTLG Switch-mode Dual Schottky Power Rectifier Features and Benefits • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C) • High Junction Temperature • High dv/dt Capability • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • This Device is Pb−Free and is RoHS Compliant* Applications • Power Supply − Output Rectification • Power Management − ORING • Instrumentation Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 1.
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