MBRA1H100 - Schottky Power Rectifier

onsemi

Key Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount.

MBRA1H100 schottky power rectifier by onsemi - Datasheet Preview

Datasheet Details

Part number	MBRA1H100
Manufacturer	onsemi
File Size	269.14 KB
Description	Schottky Power Rectifier
Datasheet	MBRA1H100 Datasheet

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Full PDF Text Transcription (Reference)

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Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package MBRA1H100, NRVBA1H100, NRVBA1H100N Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.