MBRF2545CT Description
MBRF2545CT Preferred Device SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry.
MBRF2545CT Key Features
- ăHighly Stable Oxide Passivated Junction -ăVery Low Forward Voltage Drop -ăMatched Dual Die Construction -ăHigh Junction
- ăCase: Epoxy, Molded -ăWeight: 1.9 Grams (Approximately) -ăFinish: All External Surfaces Corrosion Resistant and Termina
- ăLead Temperature for Soldering Purposes
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
- Rev. 8