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MBRF2545CT Datasheet SWITCHMODE Schottky Power Rectifier

Manufacturer: onsemi

Overview

MBRF2545CT Preferred Device SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode.

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features.
  • ăHighly Stable Oxide Passivated Junction.
  • ăVery Low Forward Voltage Drop.
  • ăMatched Dual Die Construction.
  • ăHigh Junction Temperature Capability.
  • ăHigh dv/dt Capability.
  • ăExcellent Ability to Withstand Reverse Avalanch.