Datasheet Summary
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MBT6429DW1T1 Amplifier Transistors
NPN Silicon
Features
- Pb- Free Package is Available
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous Symbol VCEO VCBO VEBO IC 6429DW1T1 45 55 6.0 200 Unit Vdc Vdc Vdc mAdc (4) Symbol PD 150 RqJA TJ, Tstg 833
- 55 to +150 °C/W °C Max Unit mW (3) http://onsemi.
(2)
(1)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
(5)
(6)
MARKING DIAGRAM
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum remended foot print.
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