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MC33153 Datasheet

Single IGBT Gate Driver

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MC33153
Single IGBT Gate Driver
The MC33153 is specifically designed as an IGBT driver for high
power applications that include ac induction motor control, brushless
dc motor control and uninterruptable power supplies. Although
designed for driving discrete and module IGBTs, this device offers a
cost effective solution for driving power MOSFETs and Bipolar
Transistors. Device protection features include the choice of
desaturation or overcurrent sensing and undervoltage detection. These
devices are available in dualinline and surface mount packages.
Features
High Current Output Stage: 1.0 A Source/2.0 A Sink
Protection Circuits for Both Conventional and Sense IGBTs
Programmable Fault Blanking Time
Protection against Overcurrent and Short Circuit
Undervoltage Lockout Optimized for IGBT’s
Negative Gate Drive Capability
Cost Effectively Drives Power MOSFETs and Bipolar Transistors
This is a PbFree and HalideFree Device
VCC
Fault
Output 7
VEE
Short Circuit
Latch S
Q
R
Overcurrent
Latch S
Q
R
VCC
VCC
6
VCC
Short Circuit
Comparator
Overcurrent
Comparator
130 mV
65 mV
VCC
270 mA
Fault Blanking/
Desaturation
Comparator
6.5 V
VCC
Current
Sense
1 Input
VEE Kelvin
VCC 2 GND
Fault
8 Blanking/
Desaturation
VEE Input
VCC
Output
Stage
http://onsemi.com
MARKING
DIAGRAMS
8
SOIC8
33153
D SUFFIX
ALYW
1 CASE 751
G
1
8
PDIP8
P SUFFIX
CASE 626
MC33153P
AWL
YYWWG
11
A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week
G or G = PbFree Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Current Sense
Input
1
Kelvin GND 2
VEE 3
Input 4
8
Fault Blanking/
Desaturation Input
7 Fault Output
6 VCC
5 Drive Output
Input
4
VEE
VCC
Under
Voltage
Lockout
100 k
Drive
5 Output
VEE
12 V/
11 V
3 VEE
This device contains 133 active transistors.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
Figure 1. Representative Block Diagram
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 8
1
Publication Order Number:
MC33153/D


  ON Semiconductor Electronic Components Datasheet  

MC33153 Datasheet

Single IGBT Gate Driver

No Preview Available !

MC33153
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage
Logic Input
VCC to VEE
Kelvin Ground to VEE (Note 1)
Current Sense Input
Blanking/Desaturation Input
Gate Drive Output
Source Current
Sink Current
Diode Clamp Current
VCC VEE
KGND VEE
Vin
VS
VBD
IO
20
VEE 0.3 to VCC
0.3 to VCC
0.3 to VCC
1.0
2.0
1.0
V
V
V
V
A
Fault Output
Source Current
Sink Current
IFO
mA
25
10
Power Dissipation and Thermal Characteristics
D Suffix SO8 Package, Case 751
TMhaexrimmaulmRPesoiwstearnDceis,sJipuantciotionn@toTAA=ir 50°C
P Suffix DIP8 Package, Case 626
MThaexrimmaulmRPesoiwstearnDceis,sJipuantciotionn@toTAA=ir 50°C
PD
RqJA
PD
RqJA
0.56 W
180 °C/W
1.0 W
100 °C/W
Operating Junction Temperature
TJ
+150
°C
Operating Ambient Temperature
TA
40 to +105
°C
Storage Temperature Range
Tstg
65 to +150
°C
Electrostatic Discharge Sensitivity (ESD) (Note 2)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
2500
250
1500
V
NOTE: ESD data available upon request.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1.
2.
Kelvin Ground must always
ESD protection per JEDEC
SbteanbdeatwrdeeJnESVDEE22anAd1V1C4C.F
for
HBM
per JEDEC Standard JESD22A115A for MM
per JEDEC Standard JESD22C101D for CDM.
ELECTRICAL CHARACTERISTICS (VCC = 15 V, VEE = 0 V, Kelvin GND connected to VEE. For typical values TA = 25°C,
for min/max values TA is the operating ambient temperature range that applies (Note 3), unless otherwise noted.)
Characteristic
Symbol
Min Typ Max
LOGIC INPUT
Input Threshold Voltage
High State (Logic 1)
Low State (Logic 0)
VIH 2.70 3.2
VIL
1.2 2.30
Input Current
High
Low
State
State
((VVIILH==13.2.0VV))
IIIIHL
130 500
50 100
DRIVE OUTPUT
Output Voltage
Low
High
State
State
((IISSinokur=ce1=.05A00)
mA)
VVOOHL
2.0 2.5
12 13.9
Output PullDown Resistor
RPD 100 200
FAULT OUTPUT
Output Voltage
Low
High
State
State
((IISSinokur=ce5=.02m0 Am)A)
VVFFHL
0.2 1.0
12 13.3
3. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
Tlow = 40°C for MC33153 Thigh = +105°C for MC33153
Unit
V
mA
V
kW
V
http://onsemi.com
2


Part Number MC33153
Description Single IGBT Gate Driver
Maker ON Semiconductor
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MC33153 Datasheet PDF





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